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| 2SC5060 Transistors Power transistor (9010V, 3A) 2SC5060 !Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. !External dimensions (Units : mm) 6.8 2.5 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 !Equivalent circuit C Taping specifications ROHM : ATV (1) Emitter (2) Collector (3) Base B R1 B : Base C : Collector E : Emitter R1 R2 R2 E 3k 1k !Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 9010 9010 6 1 2 1 150 -55~+150 Unit V V V A(DC) A(Pulse) W C C 1 2 1 Single pulse Pw=10ms 2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2. !Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5060 ATV M TV2 2500 !Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Min. 80 80 - - 1000 - - - - - - - Typ. - - - - - - - 80 20 0.2 5 0.6 Max. 100 100 10 3 2500 1.5 2 - - - - - Unit V V A mA - V V MHz pF s s s Conditions IC=50A IC=1mA VCB=70V VEB=5V VCE=3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5V, IE=-0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz IC=0.8A, RL=50 IB1=-IB2=8mA VCC 40V 1 1 2 1 Measured using pulse current. 2 Transition frequency of the device. |
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